All MOSFET. GSM2323 Datasheet

 

GSM2323 Datasheet and Replacement


   Type Designator: GSM2323
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOT-23-3L
 

 GSM2323 substitution

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GSM2323 Datasheet (PDF)

 ..1. Size:1173K  globaltech semi
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GSM2323

GSM2323 GSM2323 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM2323, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=150m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.2A,RDS(ON)=235m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo

 0.1. Size:671K  globaltech semi
gsm2323a.pdf pdf_icon

GSM2323

GSM2323A 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM2323A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=155m@VGS=-10VMOSFET, uses Advanced Trench -30V/-2.4A,RDS(ON)=240m@VGS=-4.5VTechnology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) These devices are particularly suited for

 8.1. Size:832K  globaltech semi
gsm2324.pdf pdf_icon

GSM2323

GSM2324 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2324, N-Channel enhancement mode 100V/2.3A,RDS(ON)=285m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/1.8A,RDS(ON)=295m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo

 8.2. Size:885K  globaltech semi
gsm2324a.pdf pdf_icon

GSM2323

GSM2324A 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2324A, N-Channel enhancement mode 100V/2.3A,RDS(ON)=310m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/1.8A,RDS(ON)=320m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

Datasheet: GSM2311A , GSM2312 , GSM2312A , GSM2317 , GSM2318 , GSM2318A , GSM2319A , GSM2319AS , 10N60 , GSM2323A , GSM2324 , GSM2324A , GSM2330 , GSM2330A , GSM2333A , GSM2336A , GSM2337A .

History: BUK7624-55A | UPA2766T1A

Keywords - GSM2323 MOSFET datasheet

 GSM2323 cross reference
 GSM2323 equivalent finder
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