All MOSFET. GSM2330 Datasheet

 

GSM2330 Datasheet and Replacement


   Type Designator: GSM2330
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: SOT-23-3L
 

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GSM2330 Datasheet (PDF)

 ..1. Size:832K  globaltech semi
 gsm2330.pdf pdf_icon

GSM2330

GSM2330 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM2330, N-Channel enhancement mode 90V/2.8A,RDS(ON)=190m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=200m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 0.1. Size:832K  globaltech semi
 gsm2330a.pdf pdf_icon

GSM2330

GSM2330A 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM2330A, N-Channel enhancement mode 90V/2.8A,RDS(ON)=200m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=210m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.1. Size:892K  globaltech semi
 gsm2336a.pdf pdf_icon

GSM2330

GSM2336A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2336A, N-Channel enhancement mode 30V/1.8A,RDS(ON)=380m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.5A,RDS(ON)=480m@VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/1.2A,RDS(ON)=900m@VGS=1.8V Super high density cell design for extremely These devices are p

 8.2. Size:903K  globaltech semi
 gsm2333a.pdf pdf_icon

GSM2330

GSM2333A GSM2333A 25V P-Channel Enhancement Mode MOSFET Product Description Features -25V/-2.8A,RDS(ON)=145m@VGS=-10V GSM2333A, P-Channel enhancement mode -25V/-2.4A,RDS(ON)=180m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resis

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Datasheet: GSM2318 , GSM2318A , GSM2319A , GSM2319AS , GSM2323 , GSM2323A , GSM2324 , GSM2324A , IRFB4227 , GSM2330A , GSM2333A , GSM2336A , GSM2337A , GSM2341 , GSM2343A , GSM2354 , GSM2367AS .

History: 2SK2993S | FQU2N60CTU

Keywords - GSM2330 MOSFET datasheet

 GSM2330 cross reference
 GSM2330 equivalent finder
 GSM2330 lookup
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