GSM3009S Datasheet. Specs and Replacement

Type Designator: GSM3009S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO-252-2L

GSM3009S substitution

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GSM3009S datasheet

 ..1. Size:926K  globaltech semi
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GSM3009S

GSM3009S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3009S, N-Channel enhancement mode 30V/35A,RDS(ON)=8.5m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/20A,RDS(ON)=11.5m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) v... See More ⇒

 9.1. Size:770K  globaltech semi
 gsm3025s.pdf pdf_icon

GSM3009S

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3025S, N-Channel enhancement mode 30V/9.0A,RDS(ON)=32m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/7.0A,RDS(ON)=36m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/5.0A,RDS(ON)=42m @VGS=2.5V These devices are particularly suited for low Super high density cell design for e... See More ⇒

 9.2. Size:926K  globaltech semi
 gsm3016s.pdf pdf_icon

GSM3009S

GSM3016S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3016S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/30A,RDS(ON)=9m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltag... See More ⇒

 9.3. Size:983K  globaltech semi
 gsm3050s.pdf pdf_icon

GSM3009S

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3050S, P-Channel enhancement mode -30V/-9A,RDS(ON)=60m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=72m @VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-5A,RDS(ON)=108m @VGS=-2.5V These devices are particularly suited for low Super high density cell design f... See More ⇒

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Detailed specifications: GSM2367S, GSM2376, GSM2379, GSM2519, GSM2604, GSM2911, GSM2912, GSM2913W, AO3401, GSM3015S, GSM3016S, GSM3019S, GSM3025S, GSM3030, GSM3050S, GSM3302W, GSM3306WS

Keywords - GSM3009S MOSFET specs

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