All MOSFET. GSM3306WS Datasheet

 

GSM3306WS MOSFET. Datasheet pdf. Equivalent


   Type Designator: GSM3306WS
   Marking Code: 3306WS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: DFN3X3-8L

 GSM3306WS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GSM3306WS Datasheet (PDF)

 ..1. Size:865K  globaltech semi
 gsm3306ws.pdf

GSM3306WS GSM3306WS

GSM3306WS GSM3306WS 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3306WS, N-Channel enhancement mode 30V/20A,RDS(ON)=5.6m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=7.4m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly sui

 8.1. Size:897K  globaltech semi
 gsm3309ws.pdf

GSM3306WS GSM3306WS

GSM3309WS GSM3309WS 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3309WS, N-Channel enhancement mode 30V/20A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=11m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited

 8.2. Size:868K  globaltech semi
 gsm3302w.pdf

GSM3306WS GSM3306WS

GSM3302W GSM3302W 20V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3302W, N-Channel enhancement mode 20V/14A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/12A,RDS(ON)=18m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/10A,RDS(ON)=26m@VGS=1.8V Super high density cell design for extremelyThese devices are

 9.1. Size:816K  globaltech semi
 gsm3310w.pdf

GSM3306WS GSM3306WS

GSM3310W GSM3310W 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3310W, N-Channel enhancement mode 30V/16A,RDS(ON)=17m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=19m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited f

 9.2. Size:1456K  globaltech semi
 gsm3346w.pdf

GSM3306WS GSM3306WS

GSM3346W 40V N & P Pair Enhancement Mode MOSFET Product Description Features GSM3346W, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)=28m@VGS=10V provide excellent RDS(ON), low gate charge. 40V/12A,RDS(ON)=38m@VGS=4.5V P-ChannelThese devices are particularly suited for low -40V/-12A,RDS(ON)=45m@VGS=-10V voltage p

 9.3. Size:1204K  globaltech semi
 gsm3366w.pdf

GSM3306WS GSM3306WS

GSM3366W 60V N & P Pair Enhancement Mode MOSFET Product Description Features GSM3366W, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)=48m@VGS=10V provide excellent RDS(ON), low gate charge. 60V/10A,RDS(ON)=54m@VGS=4.5V P-ChannelThese devices are particularly suited for low -60V/-8A,RDS(ON)=105m@VGS=-10V voltage p

 9.4. Size:1359K  globaltech semi
 gsm3326ws.pdf

GSM3306WS GSM3306WS

GSM3326WS 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM3326WS, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 30V/12A,RDS(ON)=36m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/10A,RDS(ON)=46m@VGS=4.5V P-ChannelThese devices are particularly suited for low -30V/-8A,RDS(ON)=60m@VGS=-10V voltage

 9.5. Size:856K  globaltech semi
 gsm3316w.pdf

GSM3306WS GSM3306WS

GSM3316W GSM3316W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM3316W, N-Channel enhancement mode 60V/8A,RDS(ON)=140m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)=148m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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