All MOSFET. GSM3306WS Datasheet

 

GSM3306WS Datasheet and Replacement


   Type Designator: GSM3306WS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: DFN3X3-8L
 

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GSM3306WS Datasheet (PDF)

 ..1. Size:865K  globaltech semi
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GSM3306WS

GSM3306WS GSM3306WS 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3306WS, N-Channel enhancement mode 30V/20A,RDS(ON)=5.6m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=7.4m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly sui

 8.1. Size:897K  globaltech semi
gsm3309ws.pdf pdf_icon

GSM3306WS

GSM3309WS GSM3309WS 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3309WS, N-Channel enhancement mode 30V/20A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=11m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited

 8.2. Size:868K  globaltech semi
gsm3302w.pdf pdf_icon

GSM3306WS

GSM3302W GSM3302W 20V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3302W, N-Channel enhancement mode 20V/14A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/12A,RDS(ON)=18m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/10A,RDS(ON)=26m@VGS=1.8V Super high density cell design for extremelyThese devices are

 9.1. Size:816K  globaltech semi
gsm3310w.pdf pdf_icon

GSM3306WS

GSM3310W GSM3310W 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3310W, N-Channel enhancement mode 30V/16A,RDS(ON)=17m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=19m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited f

Datasheet: GSM3009S , GSM3015S , GSM3016S , GSM3019S , GSM3025S , GSM3030 , GSM3050S , GSM3302W , RFP50N06 , GSM3309WS , GSM3310W , GSM3316W , GSM3326WS , GSM3346W , GSM3366W , GSM3400 , GSM3400A .

History: 2SK3932-01MR | NCEP018N60 | 2SK3069 | AP15T20GI-HF | GSM3302W | FQPF9N08L | 2SK360

Keywords - GSM3306WS MOSFET datasheet

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