GSM3306WS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: GSM3306WS
Маркировка: 3306WS
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 40 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 50 nC
Время нарастания (tr): 12 ns
Выходная емкость (Cd): 550 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0056 Ohm
Тип корпуса: DFN3X3-8L
GSM3306WS Datasheet (PDF)
gsm3306ws.pdf
GSM3306WS GSM3306WS 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3306WS, N-Channel enhancement mode 30V/20A,RDS(ON)=5.6m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=7.4m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly sui
gsm3309ws.pdf
GSM3309WS GSM3309WS 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3309WS, N-Channel enhancement mode 30V/20A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=11m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited
gsm3302w.pdf
GSM3302W GSM3302W 20V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3302W, N-Channel enhancement mode 20V/14A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/12A,RDS(ON)=18m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/10A,RDS(ON)=26m@VGS=1.8V Super high density cell design for extremelyThese devices are
gsm3310w.pdf
GSM3310W GSM3310W 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3310W, N-Channel enhancement mode 30V/16A,RDS(ON)=17m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=19m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited f
gsm3346w.pdf
GSM3346W 40V N & P Pair Enhancement Mode MOSFET Product Description Features GSM3346W, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)=28m@VGS=10V provide excellent RDS(ON), low gate charge. 40V/12A,RDS(ON)=38m@VGS=4.5V P-ChannelThese devices are particularly suited for low -40V/-12A,RDS(ON)=45m@VGS=-10V voltage p
gsm3366w.pdf
GSM3366W 60V N & P Pair Enhancement Mode MOSFET Product Description Features GSM3366W, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)=48m@VGS=10V provide excellent RDS(ON), low gate charge. 60V/10A,RDS(ON)=54m@VGS=4.5V P-ChannelThese devices are particularly suited for low -60V/-8A,RDS(ON)=105m@VGS=-10V voltage p
gsm3326ws.pdf
GSM3326WS 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM3326WS, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 30V/12A,RDS(ON)=36m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/10A,RDS(ON)=46m@VGS=4.5V P-ChannelThese devices are particularly suited for low -30V/-8A,RDS(ON)=60m@VGS=-10V voltage
gsm3316w.pdf
GSM3316W GSM3316W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM3316W, N-Channel enhancement mode 60V/8A,RDS(ON)=140m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)=148m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited
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