All MOSFET. GSM3410 Datasheet

 

GSM3410 Datasheet and Replacement


   Type Designator: GSM3410
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TSOP-6
 

 GSM3410 substitution

   - MOSFET ⓘ Cross-Reference Search

 

GSM3410 Datasheet (PDF)

 ..1. Size:889K  globaltech semi
 gsm3410.pdf pdf_icon

GSM3410

GSM3410 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3410, N-Channel enhancement mode 30V/6.0A,RDS(ON)=27m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/4.5A,RDS(ON)=30m@VGS=4.5V provide excellent RDS (ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TSOP-6 p

 8.1. Size:875K  globaltech semi
 gsm3413.pdf pdf_icon

GSM3410

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3413, P-Channel enhancement mode -20V/-3.2A,RDS(ON)=100m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.6A,RDS(ON)=130m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=195m@VGS=-1.8V Super high density cell design for extremely These devices are particularly su

 8.2. Size:1106K  globaltech semi
 gsm3416.pdf pdf_icon

GSM3410

20V N-Channel Enhancement Mode MOSFET Product Description Features 20V/4.0A,RDS(ON)=26m@VGS=4.5V GSM3416, N-Channel enhancement mode 20V/3.2A,RDS(ON)=30m@VGS=2.5V MOSFET, uses Advanced Trench Technology to 20V/2.8A,RDS(ON)=36m@VGS=1.8V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 8.3. Size:820K  globaltech semi
 gsm3413a.pdf pdf_icon

GSM3410

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3413A, P-Channel enhancement mode -20V/-2.6A,RDS(ON)=110m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.2A,RDS(ON)=150m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-1.2A,RDS(ON)=205m@VGS=-1.8V Super high density cell design for extremely These devices are par

SHOW MORE

Datasheet: GSM3404 , GSM3405 , GSM3406 , GSM3406A , GSM3406AS , GSM3406S , GSM3407AS , GSM3407S , 20N50 , GSM3411 , GSM3413 , GSM3413A , GSM3414A , GSM3414S , GSM3415 , GSM3416 , GSM3424 .

History: PJA3434 | TF3423 | PJA3432 | PJA3406 | WST3403

Keywords - GSM3410 MOSFET datasheet

 GSM3410 cross reference
 GSM3410 equivalent finder
 GSM3410 lookup
 GSM3410 substitution
 GSM3410 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets

 

 
Back to Top

 


 
.