All MOSFET. GSM3414S Datasheet

 

GSM3414S Datasheet and Replacement


   Type Designator: GSM3414S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT-23-3L
 

 GSM3414S substitution

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GSM3414S Datasheet (PDF)

 ..1. Size:1087K  globaltech semi
 gsm3414s.pdf pdf_icon

GSM3414S

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3414S, N-Channel enhancement mode 20V/4.0A,RDS(ON)=50m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.4A,RDS(ON)=60m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=105m@VGS=1.8V Super high density cell design for extremely These devices are particularly suited for l

 7.1. Size:1310K  globaltech semi
 gsm3414a.pdf pdf_icon

GSM3414S

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3414A, N-Channel enhancement mode 20V/2.4A,RDS(ON)=70m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.0A,RDS(ON)=80m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=100m@VGS=1.8V Super high density cell design for extremely These devices are particularly suited for l

 8.1. Size:875K  globaltech semi
 gsm3413.pdf pdf_icon

GSM3414S

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3413, P-Channel enhancement mode -20V/-3.2A,RDS(ON)=100m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.6A,RDS(ON)=130m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=195m@VGS=-1.8V Super high density cell design for extremely These devices are particularly su

 8.2. Size:1106K  globaltech semi
 gsm3416.pdf pdf_icon

GSM3414S

20V N-Channel Enhancement Mode MOSFET Product Description Features 20V/4.0A,RDS(ON)=26m@VGS=4.5V GSM3416, N-Channel enhancement mode 20V/3.2A,RDS(ON)=30m@VGS=2.5V MOSFET, uses Advanced Trench Technology to 20V/2.8A,RDS(ON)=36m@VGS=1.8V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

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Datasheet: GSM3406S , GSM3407AS , GSM3407S , GSM3410 , GSM3411 , GSM3413 , GSM3413A , GSM3414A , IRF830 , GSM3415 , GSM3416 , GSM3424 , GSM3424A , GSM3425 , GSM3426 , GSM3430W , GSM3432 .

History: IXFT23N80Q | BRCS120P012MC | CEN2321A | 14N50L-TA3-T | MTN7451J3 | 14N50G-TF1-T

Keywords - GSM3414S MOSFET datasheet

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