GSM3425 Datasheet. Specs and Replacement

Type Designator: GSM3425

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm

Package: TSOP-6

GSM3425 substitution

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GSM3425 datasheet

 ..1. Size:912K  globaltech semi
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GSM3425

GSM3425 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3425, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m @VGS=4.5V MOSFET, uses Advanced Trench Technology to -20V/-3.2A,RDS(ON)=70m @VGS=2.5V provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=96m @VGS=1.8V Super high density cell design for extremely These devices are ... See More ⇒

 8.1. Size:883K  globaltech semi
 gsm3426.pdf pdf_icon

GSM3425

GSM3426 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3426, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=40m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m @VGS=1.8V Super high density cell design for extremely These devices are partic... See More ⇒

 8.2. Size:772K  globaltech semi
 gsm3424a.pdf pdf_icon

GSM3425

GSM3424A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3424A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=85m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.0A,RDS(ON)=95m @VGS=4.5V provide excellent RDS(ON) ,low gate charge. 30V/1.5A,RDS(ON)=265m @VGS=4.5V Super high density cell design for extremely These devices are ... See More ⇒

 8.3. Size:883K  globaltech semi
 gsm3424.pdf pdf_icon

GSM3425

GSM3424 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3424, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=85m @VGS=4.5V provide excellent RDS(ON) ,low gate charge. 30V/2.2A,RDS(ON)=155m @VGS=2.5V Super high density cell design for extremely These devices are pa... See More ⇒

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Detailed specifications: GSM3413, GSM3413A, GSM3414A, GSM3414S, GSM3415, GSM3416, GSM3424, GSM3424A, IRFB31N20D, GSM3426, GSM3430W, GSM3432, GSM3434W, GSM3436, GSM3446, GSM3452, GSM3454

Keywords - GSM3425 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.