GSM3458BW Datasheet. Specs and Replacement

Type Designator: GSM3458BW

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm

Package: TSOP-6

GSM3458BW substitution

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GSM3458BW datasheet

 ..1. Size:805K  globaltech semi
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GSM3458BW

GSM3458BW 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM3458BW, N-Channel enhancement mode 60V/5.6A,RDS(ON)=135m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/3.8A,RDS(ON)=145m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l... See More ⇒

 7.1. Size:882K  globaltech semi
 gsm3458.pdf pdf_icon

GSM3458BW

GSM3458 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM3458, N-Channel enhancement mode 60V/5.6A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/3.8A,RDS(ON)=66m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low ... See More ⇒

 8.1. Size:841K  globaltech semi
 gsm3456.pdf pdf_icon

GSM3458BW

GSM3456 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3456, N-Channel enhancement mode 30V/5.6A,RDS(ON)=40m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/4.2A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low ... See More ⇒

 8.2. Size:966K  globaltech semi
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GSM3458BW

GSM3459 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM3459, P-Channel enhancement mode -60V/-4.8A,RDS(ON)=128m @VGS=-10V MOSFET, uses Advanced Trench Technology to -60V/-3.6A,RDS(ON)=138m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for... See More ⇒

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Detailed specifications: GSM3434W, GSM3436, GSM3446, GSM3452, GSM3454, GSM3456, GSM3456S, GSM3458, EMB04N03H, GSM3459, GSM3460, GSM3466, GSM3481S, GSM3484, GSM3484S, GSM3485, GSM3497

Keywords - GSM3458BW MOSFET specs

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