GSM3458BW
MOSFET. Datasheet pdf. Equivalent
Type Designator: GSM3458BW
Marking Code: 58B*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 5.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 38
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.135
Ohm
Package:
TSOP-6
GSM3458BW
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GSM3458BW
Datasheet (PDF)
..1. Size:805K globaltech semi
gsm3458bw.pdf 
GSM3458BW 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM3458BW, N-Channel enhancement mode 60V/5.6A,RDS(ON)=135m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/3.8A,RDS(ON)=145m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l
7.1. Size:882K globaltech semi
gsm3458.pdf
GSM3458 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM3458, N-Channel enhancement mode 60V/5.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/3.8A,RDS(ON)=66m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
8.1. Size:841K globaltech semi
gsm3456.pdf
GSM3456 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3456, N-Channel enhancement mode 30V/5.6A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/4.2A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
8.2. Size:966K globaltech semi
gsm3459.pdf
GSM3459 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM3459, P-Channel enhancement mode -60V/-4.8A,RDS(ON)=128m@VGS=-10V MOSFET, uses Advanced Trench Technology to -60V/-3.6A,RDS(ON)=138m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
8.3. Size:438K globaltech semi
gsm3454.pdf
GSM3454 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM3454, N-Channel enhancement mode 40V/5.6A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/3.6A,RDS(ON)=74m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
8.4. Size:841K globaltech semi
gsm3452.pdf
GSM3452 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3452, N-Channel enhancement mode 30V/5.6A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/4.2A,RDS(ON)=52m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/3.0A,RDS(ON)=58m@VGS=2.5V Super high density cell design for extremely These devices are particu
8.5. Size:868K globaltech semi
gsm3456s.pdf
GSM3456S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3456S, N-Channel enhancement mode 30V/5.4A,RDS(ON)=40m@VGS=10.0V MOSFET, uses Advanced Trench Technology to 30V/4.8A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
