All MOSFET. GSM4102W Datasheet

 

GSM4102W MOSFET. Datasheet pdf. Equivalent


   Type Designator: GSM4102W
   Marking Code: 4102W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 3.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.6 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.158 Ohm
   Package: SOP-8P

 GSM4102W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GSM4102W Datasheet (PDF)

 ..1. Size:748K  globaltech semi
 gsm4102w.pdf

GSM4102W GSM4102W

GSM4102W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4102W, N-Channel enhancement mode 100V/3.8A,RDS(ON)=158m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/3.0A,RDS(ON)=175m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 9.1. Size:865K  globaltech semi
 gsm4172ws.pdf

GSM4102W GSM4102W

GSM4172WS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4172WS, N-Channel enhancement mode 30V/15A,RDS(ON)=12m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=15m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.2. Size:1293K  globaltech semi
 gsm4124ws.pdf

GSM4102W GSM4102W

GSM4124WS 40V N-Channel Enhancement Mode MOSFET Product Description Features 40V/14A,RDS(ON)=8m@VGS=10V GSM4124WS, N-Channel enhancement mode 40V/12A,RDS(ON)=9m@VGS=4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) SOP-8P package design These devices are particul

 9.3. Size:888K  globaltech semi
 gsm4172s.pdf

GSM4102W GSM4102W

GSM4172S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4172S, N-Channel enhancement mode 30V/15A,RDS(ON)=12m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=15m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.4. Size:845K  globaltech semi
 gsm4134w.pdf

GSM4102W GSM4102W

GSM4134W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134W, N-Channel enhancement mode 30V/12A,RDS(ON)=16m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low SOP-8P pac

 9.5. Size:843K  globaltech semi
 gsm4134.pdf

GSM4102W GSM4102W

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134, N-Channel enhancement mode 30V/12A,RDS(ON)=15m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=20m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low SOP-8P package design

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History: SML6070BN

 

 
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