GSM4102W Datasheet. Specs and Replacement
Type Designator: GSM4102W
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.158 Ohm
Package: SOP-8P
GSM4102W substitution
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GSM4102W datasheet
gsm4102w.pdf
GSM4102W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4102W, N-Channel enhancement mode 100V/3.8A,RDS(ON)=158m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/3.0A,RDS(ON)=175m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for ... See More ⇒
gsm4124ws.pdf
GSM4124WS 40V N-Channel Enhancement Mode MOSFET Product Description Features 40V/14A,RDS(ON)=8m @VGS=10V GSM4124WS, N-Channel enhancement mode 40V/12A,RDS(ON)=9m @VGS=4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) SOP-8P package design These devices are particul... See More ⇒
gsm4172s.pdf
GSM4172S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4172S, N-Channel enhancement mode 30V/15A,RDS(ON)=12m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=15m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low ... See More ⇒
Detailed specifications: GSM3679S, GSM3804, GSM3806W, GSM3814W, GSM3911W, GSM3981, GSM3993, GSM4048WS, IRFP460, GSM4124WS, GSM4134, GSM4134W, GSM4172S, GSM4172WS, GSM4210, GSM4210W, GSM4214
Keywords - GSM4102W MOSFET specs
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