All MOSFET. GSM4435WS Datasheet

 

GSM4435WS MOSFET. Datasheet pdf. Equivalent


   Type Designator: GSM4435WS
   Marking Code: 4435WS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: SOP-8P

 GSM4435WS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GSM4435WS Datasheet (PDF)

 ..1. Size:1086K  globaltech semi
 gsm4435ws.pdf

GSM4435WS GSM4435WS

GSM4435WS GSM4435WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435WS, P-Channel enhancement mode -30V/-9A,RDS(ON)= 17m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)= 24m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 6.1. Size:981K  globaltech semi
 gsm4435w.pdf

GSM4435WS GSM4435WS

GSM4435W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435W, P-Channel enhancement mode -30V/-10A,RDS(ON)=24m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=35m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOP-

 7.1. Size:776K  globaltech semi
 gsm4435.pdf

GSM4435WS GSM4435WS

GSM4435 GSM4435 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435, P-Channel enhancement mode -30V/-10A,RDS(ON)= 28m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7.0A,RDS(ON)= 37m@VGS=-4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage lo

 7.2. Size:1035K  globaltech semi
 gsm4435s.pdf

GSM4435WS GSM4435WS

GSM4435S GSM4435S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435S, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=26m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SDF4NA100SXH

 

 
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