GSM4435WS Datasheet. Specs and Replacement

Type Designator: GSM4435WS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: SOP-8P

GSM4435WS substitution

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GSM4435WS datasheet

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GSM4435WS

GSM4435WS GSM4435WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435WS, P-Channel enhancement mode -30V/-9A,RDS(ON)= 17m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)= 24m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited... See More ⇒

 6.1. Size:981K  globaltech semi
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GSM4435WS

GSM4435W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435W, P-Channel enhancement mode -30V/-10A,RDS(ON)=24m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=35m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOP-... See More ⇒

 7.1. Size:776K  globaltech semi
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GSM4435WS

GSM4435 GSM4435 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435, P-Channel enhancement mode -30V/-10A,RDS(ON)= 28m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7.0A,RDS(ON)= 37m @VGS=-4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage lo... See More ⇒

 7.2. Size:1035K  globaltech semi
 gsm4435s.pdf pdf_icon

GSM4435WS

GSM4435S GSM4435S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435S, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=26m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for ... See More ⇒

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Detailed specifications: FTD36N06N, SFP65N06, IPI16CN10N, GSM4424, GSM4424W, GSM4435, GSM4435S, GSM4435W, AO3401, GSM4440, GSM4440W, GSM4447, GSM4486, GSM4510S, GSM4516, GSM4516W, GSM4535

Keywords - GSM4435WS MOSFET specs

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