All MOSFET. GSM4535 Datasheet

 

GSM4535 Datasheet and Replacement


   Type Designator: GSM4535
   Marking Code: 4535
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 6.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 13 nC
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOP-8
 

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GSM4535 Datasheet (PDF)

 ..1. Size:1224K  globaltech semi
 gsm4535.pdf pdf_icon

GSM4535

40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4535, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m@VGS= -10V MOSFET, uses Advanced Trench Technology to -40V/-5.2A,RDS(ON)= 50m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volt

 0.1. Size:1190K  globaltech semi
 gsm4535w.pdf pdf_icon

GSM4535

GSM4535W 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4535W, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m@VGS= -10V OSFET, uses Advanced Trench Technology to -40V/-5.2A,RDS(ON)= 50m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 8.1. Size:1320K  globaltech semi
 gsm4539ws.pdf pdf_icon

GSM4535

GSM4539WS 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4539WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/5.8A,RDS(ON)=36m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=46m@VGS=4.5V P-Channel These devices are particularly suited for low -30V/-5.4A,RDS(ON)=62m@VGS=-10V

 8.2. Size:1320K  globaltech semi
 gsm4539s.pdf pdf_icon

GSM4535

GSM4539S 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4539S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/5.8A,RDS(ON)=40m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=50m@VGS=4.5V P-Channel These devices are particularly suited for low -30V/-5.4A,RDS(ON)=65m@VGS=-10V

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Datasheet: GSM4435WS , GSM4440 , GSM4440W , GSM4447 , GSM4486 , GSM4510S , GSM4516 , GSM4516W , RFP50N06 , GSM4535W , GSM4539S , GSM4539WS , GSM4546 , GSM4559 , GSM4599 , GSM4599W , GSM4634WS .

History: STH110N10F7-2 | CPC3703C | NVATS5A302PLZ

Keywords - GSM4535 MOSFET datasheet

 GSM4535 cross reference
 GSM4535 equivalent finder
 GSM4535 lookup
 GSM4535 substitution
 GSM4535 replacement

 

 
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