GSM4637W Datasheet. Specs and Replacement
Type Designator: GSM4637W
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 145 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
Package: SOP-8P
GSM4637W substitution
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GSM4637W datasheet
gsm4637w.pdf
GSM4637W 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4637W, P-Channel enhancement mode -40V/-6.8A,RDS(ON)=37m @VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-5.8A,RDS(ON)=54m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for... See More ⇒
gsm4637.pdf
40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4637, P-Channel enhancement mode -40V/-6.8A,RDS(ON)= 37m @VGS= -10V OSFET, uses Advanced Trench Technology to -40V/-5.8A,RDS(ON)= 54m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volta... See More ⇒
gsm4634ws.pdf
GSM4634WS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4634WS, N-Channel enhancement mode 30V/18A,RDS(ON)=5.8m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=7.2m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) ... See More ⇒
Detailed specifications: GSM4539S, GSM4539WS, GSM4546, GSM4559, GSM4599, GSM4599W, GSM4634WS, GSM4637, STP80NF70, GSM4804, GSM4822S, GSM4822WS, GSM4850WS, GSM4874WS, GSM4896, GSM4900W, GSM4906
Keywords - GSM4637W MOSFET specs
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