All MOSFET. GSM4874WS Datasheet

 

GSM4874WS Datasheet and Replacement


   Type Designator: GSM4874WS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SOP-8P
 

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GSM4874WS Datasheet (PDF)

 ..1. Size:908K  globaltech semi
 gsm4874ws.pdf pdf_icon

GSM4874WS

GSM4874WS 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4874WS, N-Channel enhancement mode 60V/12A,RDS(ON)=11m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/10A,RDS(ON)=15m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.1. Size:747K  globaltech semi
 gsm4822ws.pdf pdf_icon

GSM4874WS

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822WS, N-Channel enhancement mode 30V/6.0A,RDS(ON)=34m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.0A,RDS(ON)=44m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage powe

 9.2. Size:826K  globaltech semi
 gsm4896.pdf pdf_icon

GSM4874WS

GSM4896 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4896, N-Channel enhancement mode 100V/6.8A,RDS(ON)=115m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/5.6A,RDS(ON)=125m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo

 9.3. Size:723K  globaltech semi
 gsm4804.pdf pdf_icon

GSM4874WS

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4804, N-Channel enhancement mode 40V/16A,RDS(ON)= 48m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/10A,RDS(ON)= 70m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

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Datasheet: GSM4599W , GSM4634WS , GSM4637 , GSM4637W , GSM4804 , GSM4822S , GSM4822WS , GSM4850WS , 10N65 , GSM4896 , GSM4900W , GSM4906 , GSM4922W , GSM4924 , GSM4924W , GSM4925 , GSM4925S .

History: IPD800N06NG

Keywords - GSM4874WS MOSFET datasheet

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