GSM4924 Datasheet. Specs and Replacement

Type Designator: GSM4924

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: SOP-8

GSM4924 substitution

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GSM4924 datasheet

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GSM4924

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4924, N-Channel enhancement mode 40V/8A,RDS(ON)= 24m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/6A,RDS(ON)= 48m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ma... See More ⇒

 0.1. Size:1478K  globaltech semi
 gsm4924w.pdf pdf_icon

GSM4924

GSM4924W 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4924W, N-Channel enhancement mode 40V/8A,RDS(ON)=22m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/6A,RDS(ON)=28m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low S... See More ⇒

 8.1. Size:834K  globaltech semi
 gsm4925ws.pdf pdf_icon

GSM4924

GSM4925WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925WS, P-Channel enhancement mode -30V/-8.0A,RDS(ON)= 18m @VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-6.0A,RDS(ON)= 26m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite... See More ⇒

 8.2. Size:719K  globaltech semi
 gsm4925.pdf pdf_icon

GSM4924

GSM4925 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925, P-Channel enhancement mode -30V/-7.2A,RDS(ON)= 28m @VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-5.8A,RDS(ON)= 37m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo... See More ⇒

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Detailed specifications: GSM4822S, GSM4822WS, GSM4850WS, GSM4874WS, GSM4896, GSM4900W, GSM4906, GSM4922W, 5N60, GSM4924W, GSM4925, GSM4925S, GSM4925W, GSM4925WS, GSM4936S, GSM4936WS, GSM4946

Keywords - GSM4924 MOSFET specs

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