All MOSFET. GSM4925WS Datasheet

 

GSM4925WS MOSFET. Datasheet pdf. Equivalent


   Type Designator: GSM4925WS
   Marking Code: 4925WS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SOP-8

 GSM4925WS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GSM4925WS Datasheet (PDF)

 ..1. Size:834K  globaltech semi
 gsm4925ws.pdf

GSM4925WS GSM4925WS

GSM4925WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925WS, P-Channel enhancement mode -30V/-8.0A,RDS(ON)= 18m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-6.0A,RDS(ON)= 26m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite

 6.1. Size:823K  globaltech semi
 gsm4925w.pdf

GSM4925WS GSM4925WS

GSM4925W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925W, P-Channel enhancement mode -30V/-7.2A,RDS(ON)= 30m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-5.8A,RDS(ON)= 36m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 7.1. Size:719K  globaltech semi
 gsm4925.pdf

GSM4925WS GSM4925WS

GSM4925 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925, P-Channel enhancement mode -30V/-7.2A,RDS(ON)= 28m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-5.8A,RDS(ON)= 37m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo

 7.2. Size:833K  globaltech semi
 gsm4925s.pdf

GSM4925WS GSM4925WS

GSM4925S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925S, P-Channel enhancement mode -30V/-7.5A,RDS(ON)= 18m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-6.0A,RDS(ON)= 26m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

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