All MOSFET. GSM6424 Datasheet

 

GSM6424 Datasheet and Replacement


   Type Designator: GSM6424
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TSOP-6
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GSM6424 Datasheet (PDF)

 ..1. Size:1035K  globaltech semi
 gsm6424.pdf pdf_icon

GSM6424

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6424,N-Channel enhancement mode 30V/5.0A,RDS(ON)=38m@VGS=10.0V MOSFET, uses Advanced Trench Technology to 30V/4.0A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TSOP-

 9.1. Size:1072K  globaltech semi
 gsm6405 gsm6405ws.pdf pdf_icon

GSM6424

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM6405TSF, P-Channel enhancement mode -30V/-5.0A,RDS(ON)=55m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-4.0A,RDS(ON)=85m@VGS=-4.5V provide excellent RDS (ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: STC2200 | HM1404D | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003

Keywords - GSM6424 MOSFET datasheet

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