All MOSFET. GSM7923WS Datasheet

 

GSM7923WS Datasheet and Replacement


   Type Designator: GSM7923WS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: DFN3X3-8L
 

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GSM7923WS Datasheet (PDF)

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GSM7923WS

GSM7923WS GSM7923WS 30V P-Channel Enhancement Mode MOSFETProduct Description Features GSM7923WS, P-Channel enhancement mode -30V/-8A,RDS(ON)=55m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-6A,RDS(ON)=75m@VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-4A,RDS(ON)=95m@VGS=-2.5V Super high density cell design for extremelyThese dev

Datasheet: GSM7400 , GSM7402 , GSM7412 , GSM7420 , GSM7424S , GSM7472S , GSM7617WS , GSM7619WS , IRFB4227 , GSM8205 , GSM8206 , GSM8411 , GSM8412 , GSM8439 , GSM8451 , GSM8452 , GSM8459 .

History: APT30M40B2VRG

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