GSM7923WS MOSFET. Datasheet pdf. Equivalent
Type Designator: GSM7923WS
Marking Code: 7923WS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: DFN3X3-8L
GSM7923WS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GSM7923WS Datasheet (PDF)
..1. Size:909K globaltech semi
gsm7923ws.pdf
gsm7923ws.pdf
GSM7923WS GSM7923WS 30V P-Channel Enhancement Mode MOSFETProduct Description Features GSM7923WS, P-Channel enhancement mode -30V/-8A,RDS(ON)=55m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-6A,RDS(ON)=75m@VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-4A,RDS(ON)=95m@VGS=-2.5V Super high density cell design for extremelyThese dev
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