All MOSFET. GSM8483 Datasheet

 

GSM8483 Datasheet and Replacement


   Type Designator: GSM8483
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: SOT-223
 

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GSM8483 Datasheet (PDF)

 ..1. Size:837K  globaltech semi
 gsm8483.pdf pdf_icon

GSM8483

GSM8483 GSM8483 100V P-Channel Enhancement Mode MOSFET Product Description Features -100V/-3.8A,RDS(ON)=260m@VGS=-10V GSM8483, P-Channel enhancement mode -100V/-2.6A,RDS(ON)=290m@VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. SOT-223 package de

 9.1. Size:1204K  globaltech semi
 gsm8471.pdf pdf_icon

GSM8483

GSM8471 GSM8471 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM8471, N-Channel enhancement mode 60V/5.8A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/4.6A,RDS(ON)=60m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (

 9.2. Size:876K  globaltech semi
 gsm8439.pdf pdf_icon

GSM8483

GSM8439 GSM8439 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/6.0A,RDS(ON)=45m@VGS=4.5V GSM8439, N-Channel enhancement mode 30V/5.5A,RDS(ON)=55m@VGS=2.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly

 9.3. Size:910K  globaltech semi
 gsm8411.pdf pdf_icon

GSM8483

GSM8411 GSM8411 100V N-Channel Enhancement Mode MOSFET Product Description Features 100V/5.8A,RDS(ON)=115m@VGS=10V GSM8411, N-Channel enhancement mode 100V/4.6A,RDS(ON)=125m@VGS=4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly

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Datasheet: GSM8411 , GSM8412 , GSM8439 , GSM8451 , GSM8452 , GSM8459 , GSM8471 , GSM8473 , 2SK3878 , GSM8803 , GSM8816 , GSM8822 , GSM8822S , GSM8823 , GSM8904 , GSM8918 , GSM8931 .

History: GSM8822S | AFP1433 | KIA730H-252 | SWP068R08E8T | AM50P04-20D | SSF80R1K3S | PSMN018-80YS

Keywords - GSM8483 MOSFET datasheet

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