GSM8483 datasheet, подбор замены

 ..1. Size:837K  globaltech semi
 gsm8483.pdf 

GSM8483 GSM8483 100V P-Channel Enhancement Mode MOSFET Product Description Features -100V/-3.8A,RDS(ON)=260m @VGS=-10V GSM8483, P-Channel enhancement mode -100V/-2.6A,RDS(ON)=290m @VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. SOT-223 package de

 9.1. Size:1204K  globaltech semi
 gsm8471.pdf 

GSM8471 GSM8471 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM8471, N-Channel enhancement mode 60V/5.8A,RDS(ON)=54m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/4.6A,RDS(ON)=60m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (

 9.2. Size:876K  globaltech semi
 gsm8439.pdf 

 9.3. Size:910K  globaltech semi
 gsm8411.pdf 

GSM8411 GSM8411 100V N-Channel Enhancement Mode MOSFET Product Description Features 100V/5.8A,RDS(ON)=115m @VGS=10V GSM8411, N-Channel enhancement mode 100V/4.6A,RDS(ON)=125m @VGS=4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly

 9.4. Size:903K  globaltech semi
 gsm8473.pdf 

GSM8473 GSM8473 60V P-Channel Enhancement Mode MOSFET Product Description Features -60V/-4.8A,RDS(ON)=135m @VGS=-10V GSM8473, P-Channel enhancement mode -60V/-3.6A,RDS(ON)=155m @VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particula

 9.5. Size:874K  globaltech semi
 gsm8459.pdf 

 9.6. Size:787K  globaltech semi
 gsm8452.pdf 

GSM8452 GSM8452 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-5.0A,RDS(ON)=70m @VGS=-10V GSM8452, P-Channel enhancement mode -30V/-4.2A,RDS(ON)=90m @VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularl

 9.7. Size:1463K  globaltech semi
 gsm8451.pdf 

GSM8451 GSM8451 60V P-Channel Enhancement Mode MOSFET Product Description Features -60V/-3.0A,RDS(ON)=305m @VGS=-10V GSM8451, P-Channel enhancement mode -60V/-2.0A,RDS(ON)=330m @VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly

 9.8. Size:879K  globaltech semi
 gsm8412.pdf 

GSM8412 GSM8412 100V N-Channel Enhancement Mode MOSFET Product Description Features 100V/3.6A,RDS(ON)=300m @VGS=10V GSM8412, N-Channel enhancement mode 100V/3.0A,RDS(ON)=310m @VGS=4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. SOT-223 package design