GSM8483 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: GSM8483
Маркировка: 8483
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 2.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.8 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 12 nC
trⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 70 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.26 Ohm
Тип корпуса: SOT-223
GSM8483 Datasheet (PDF)
gsm8483.pdf
GSM8483 GSM8483 100V P-Channel Enhancement Mode MOSFET Product Description Features -100V/-3.8A,RDS(ON)=260m@VGS=-10V GSM8483, P-Channel enhancement mode -100V/-2.6A,RDS(ON)=290m@VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. SOT-223 package de
gsm8471.pdf
GSM8471 GSM8471 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM8471, N-Channel enhancement mode 60V/5.8A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/4.6A,RDS(ON)=60m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (
gsm8439.pdf
GSM8439 GSM8439 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/6.0A,RDS(ON)=45m@VGS=4.5V GSM8439, N-Channel enhancement mode 30V/5.5A,RDS(ON)=55m@VGS=2.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly
gsm8411.pdf
GSM8411 GSM8411 100V N-Channel Enhancement Mode MOSFET Product Description Features 100V/5.8A,RDS(ON)=115m@VGS=10V GSM8411, N-Channel enhancement mode 100V/4.6A,RDS(ON)=125m@VGS=4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly
gsm8473.pdf
GSM8473 GSM8473 60V P-Channel Enhancement Mode MOSFET Product Description Features -60V/-4.8A,RDS(ON)=135m@VGS=-10V GSM8473, P-Channel enhancement mode -60V/-3.6A,RDS(ON)=155m@VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particula
gsm8459.pdf
GSM8459 GSM8459 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/6.0A,RDS(ON)=44m@VGS=10V GSM8459, N-Channel enhancement mode 30V/5.5A,RDS(ON)=50m@VGS=4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly
gsm8452.pdf
GSM8452 GSM8452 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-5.0A,RDS(ON)=70m@VGS=-10V GSM8452, P-Channel enhancement mode -30V/-4.2A,RDS(ON)=90m@VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularl
gsm8451.pdf
GSM8451 GSM8451 60V P-Channel Enhancement Mode MOSFET Product Description Features -60V/-3.0A,RDS(ON)=305m@VGS=-10V GSM8451, P-Channel enhancement mode -60V/-2.0A,RDS(ON)=330m@VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly
gsm8412.pdf
GSM8412 GSM8412 100V N-Channel Enhancement Mode MOSFET Product Description Features 100V/3.6A,RDS(ON)=300m@VGS=10V GSM8412, N-Channel enhancement mode 100V/3.0A,RDS(ON)=310m@VGS=4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. SOT-223 package design
Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
Список транзисторов
Обновления
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