GSM8822 Datasheet. Specs and Replacement

Type Designator: GSM8822

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TSSOP-8P

GSM8822 substitution

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GSM8822 datasheet

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GSM8822

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8822, N-Channel enhancement mode 20V/7.2A,RDS(ON)=28m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/4.8A,RDS(ON)=32m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m @VGS=1.8V These devices are particularly suited for low Super high density cell desig... See More ⇒

 0.1. Size:432K  globaltech semi
 gsm8822s.pdf pdf_icon

GSM8822

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8822S, N-Channel enhancement mode 20V/6.5A,RDS(ON)=32m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=35m @VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt... See More ⇒

 8.1. Size:859K  globaltech semi
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GSM8822

GSM8823 20V Common-Drain P-Channel Enhancement Mode MOSFET Product Description Features GSM8823, P-Channel enhancement mode -20V/-7.2A,RDS(ON)=48m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-4.8A,RDS(ON)=62m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-3.0A,RDS(ON)=88m @VGS=-1.8V Super high density cell design for extremely ... See More ⇒

 9.1. Size:616K  globaltech semi
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GSM8822

GSM8803 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM8803, P-Channel enhancement mode -20V/-5.4A,RDS(ON)=32m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-4.0A,RDS(ON)=42m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-3.0A,RDS(ON)=58m @VGS=-1.8V Super high density cell design for extremely These devic... See More ⇒

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Detailed specifications: GSM8451, GSM8452, GSM8459, GSM8471, GSM8473, GSM8483, GSM8803, GSM8816, IRF9540N, GSM8822S, GSM8823, GSM8904, GSM8918, GSM8931, GSM8936, GSM8943, GSM8968

Keywords - GSM8822 MOSFET specs

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