GSM8943 Datasheet. Specs and Replacement

Type Designator: GSM8943

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm

Package: SOT-89

GSM8943 substitution

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GSM8943 datasheet

 ..1. Size:1190K  globaltech semi
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GSM8943

GSM8943 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM8943, P-Channel enhancement mode -40V/-4.6A,RDS(ON)=43m @VGS=-10V MOSFET, uses Advanced Trench Technology -40V/-3.6A,RDS(ON)=58m @ VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for l... See More ⇒

 9.1. Size:887K  globaltech semi
 gsm8988.pdf pdf_icon

GSM8943

GSM8988 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for lo... See More ⇒

 9.2. Size:848K  globaltech semi
 gsm8904.pdf pdf_icon

GSM8943

GSM8904 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM8904, N-Channel enhancement mode 30V/5.6A,RDS(ON)=72m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.6A,RDS(ON)=95m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low ... See More ⇒

 9.3. Size:830K  globaltech semi
 gsm8936.pdf pdf_icon

GSM8943

GSM8936 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM8936, N-Channel enhancement mode 60V/4.6A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.6A,RDS(ON)=54m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. 60V/2.0A,RDS(ON)=95m @ VGS=3.3V Super high density cell design for extremely low These devices are p... See More ⇒

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Detailed specifications: GSM8816, GSM8822, GSM8822S, GSM8823, GSM8904, GSM8918, GSM8931, GSM8936, SPP20N60C3, GSM8968, GSM8987, GSM8987W, GSM8988, GSM8988W, GSM8989, GSM8995, GSM9407

Keywords - GSM8943 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.