GSM8943 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: GSM8943
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1.45 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4.6 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 55 ns
Cossⓘ - Выходная емкость: 145 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.043 Ohm
Тип корпуса: SOT-89
GSM8943 Datasheet (PDF)
gsm8943.pdf
GSM8943 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM8943, P-Channel enhancement mode -40V/-4.6A,RDS(ON)=43m@VGS=-10V MOSFET, uses Advanced Trench Technology -40V/-3.6A,RDS(ON)=58m@ VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for l
gsm8988.pdf
GSM8988 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for lo
gsm8904.pdf
GSM8904 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM8904, N-Channel enhancement mode 30V/5.6A,RDS(ON)=72m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.6A,RDS(ON)=95m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low
gsm8936.pdf
GSM8936 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM8936, N-Channel enhancement mode 60V/4.6A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.6A,RDS(ON)=54m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. 60V/2.0A,RDS(ON)=95m@ VGS=3.3V Super high density cell design for extremely low These devices are p
gsm8987w.pdf
GSM8987W 80V N-Channel Enhancement Mode MOSFET Product Description Features GSM8987W, N-Channel enhancement mode 80V/4.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 80V/3.6A,RDS(ON)=85m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low
gsm8918.pdf
GSM8918 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM8918, N-Channel enhancement mode 40V/4.6A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/3.6A,RDS(ON)=54m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low
gsm8987.pdf
GSM8987 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM8987, N-Channel enhancement mode 90V/2.3A,RDS(ON)=310m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/1.8A,RDS(ON)=320m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low
gsm8968.pdf
GSM8968 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8968, N-Channel enhancement mode 100V/3.0A,RDS(ON)=300m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/2.0A,RDS(ON)=310m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for lo
gsm8931.pdf
GSM8931 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM8931, P-Channel enhancement mode -30V/-4.6A,RDS(ON)=36m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)=46m@ VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for l
gsm8988w.pdf
GSM8988W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988W, N-Channel enhancement mode 100V/4.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=138m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for
gsm8995.pdf
GSM8995 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM8995, P-Channel enhancement mode -30V/-4.6A,RDS(ON)=125m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)=165m@ VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for
gsm8989.pdf
GSM8989 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM8989, P-Channel enhancement mode -60V/-3.6A,RDS(ON)=115m@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-2.6A,RDS(ON)=125m@ VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
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