All MOSFET. GSM9407 Datasheet

 

GSM9407 Datasheet and Replacement


   Type Designator: GSM9407
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOP-8
 

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GSM9407 Datasheet (PDF)

 ..1. Size:839K  globaltech semi
 gsm9407.pdf pdf_icon

GSM9407

GSM9407 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM9407, P-Channel enhancement mode -60V/-4.6A,RDS(ON)= 100m@VGS= -10V OSFET, uses Advanced Trench Technology to -60V/-3.8A,RDS(ON)= 120m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 9.1. Size:955K  globaltech semi
 gsm9435s.pdf pdf_icon

GSM9407

GSM9435S P-Channel Enhancement Mode MOSFET Product Description Features GSM9435S, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=52m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=76m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.2. Size:908K  globaltech semi
 gsm9434ws.pdf pdf_icon

GSM9407

GSM9434WS 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM9434WS, P-Channel enhancement mode -20V/-6.5A,RDS(ON)= 42m@VGS= -4.5V OSFET, uses Advanced Trench Technology to -20V/-4.5A,RDS(ON)= 58m@VGS= -2.5V provide excellent RDS(ON), low gate charge. -20V/-2.5A,RDS(ON)= 72m@VGS= -1.8V Super high density cell design for extremely These

 9.3. Size:951K  globaltech semi
 gsm9435ws.pdf pdf_icon

GSM9407

GSM9435WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM9435WS, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=58m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=78m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f

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Datasheet: GSM8943 , GSM8968 , GSM8987 , GSM8987W , GSM8988 , GSM8988W , GSM8989 , GSM8995 , AON7506 , GSM9434WS , GSM9435S , GSM9435WS , GSM9498 , GSM9510S , GSM9565S , GSM9566W , GSM9575S .

History: APQ5ESN40AF | 7NM70G-TM3-T | UT9564G-TN3-R | MTP1406J3 | VBZFB60N03 | HM10N15D | P2806AT

Keywords - GSM9407 MOSFET datasheet

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