GSM9407 Datasheet. Specs and Replacement

Type Designator: GSM9407

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOP-8

GSM9407 substitution

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GSM9407 datasheet

 ..1. Size:839K  globaltech semi
 gsm9407.pdf pdf_icon

GSM9407

GSM9407 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM9407, P-Channel enhancement mode -60V/-4.6A,RDS(ON)= 100m @VGS= -10V OSFET, uses Advanced Trench Technology to -60V/-3.8A,RDS(ON)= 120m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited ... See More ⇒

 9.1. Size:955K  globaltech semi
 gsm9435s.pdf pdf_icon

GSM9407

GSM9435S P-Channel Enhancement Mode MOSFET Product Description Features GSM9435S, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=52m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=76m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low... See More ⇒

 9.2. Size:908K  globaltech semi
 gsm9434ws.pdf pdf_icon

GSM9407

GSM9434WS 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM9434WS, P-Channel enhancement mode -20V/-6.5A,RDS(ON)= 42m @VGS= -4.5V OSFET, uses Advanced Trench Technology to -20V/-4.5A,RDS(ON)= 58m @VGS= -2.5V provide excellent RDS(ON), low gate charge. -20V/-2.5A,RDS(ON)= 72m @VGS= -1.8V Super high density cell design for extremely These ... See More ⇒

 9.3. Size:951K  globaltech semi
 gsm9435ws.pdf pdf_icon

GSM9407

GSM9435WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM9435WS, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=58m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=78m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f... See More ⇒

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Detailed specifications: GSM8943, GSM8968, GSM8987, GSM8987W, GSM8988, GSM8988W, GSM8989, GSM8995, IRFB3607, GSM9434WS, GSM9435S, GSM9435WS, GSM9498, GSM9510S, GSM9565S, GSM9566W, GSM9575S

Keywords - GSM9407 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.