INJ0203AC1 Specs and Replacement
Type Designator: INJ0203AC1
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SC-59
INJ0203AC1 substitution
- MOSFET ⓘ Cross-Reference Search
INJ0203AC1 datasheet
inj0203ac1.pdf
INJ0203AC1 High Speed Switching Silicon P-channel MOSFET DESCRIPTION OUTLINE DRAWING Unit INJ0203AC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable 2.8 machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65 FEATURE Input impedance is high, and not necessary to consider a drive electric current. ... See More ⇒
inj0203bc1.pdf
INJ0203BC1 Silicon P-channel MOSFET DESCRIPTION OUTLINE DRAWING Unit INJ0203BC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable 2.8 machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65 FEATURE Input impedance is high, and not necessary to consider a drive electric current. Drive voltage -2.5... See More ⇒
inj0212ap1.pdf
INJ0212AP1 High Speed Switching Silicon P-channel MOSFET DESCRIPTION OUTLINE DRAWING UNIT mm INJ0210AP1 is a Silicon P-channel MOSFET. 4.4 1.5 This product is most suitable for use such as portable 1.6 machinery, because of low voltage drive and low on resistance. MARKING S D G FEATURE Input impedance is high, and not necessary to 0.5 0.4 0.4 consider a drive ele... See More ⇒
Detailed specifications: INJ0002AM1, INJ0002AU1, INJ0003AC1, INJ0003AM1, INJ0003AU1, INJ0011AC1, INJ0011AM1, INJ0011AU1, IRFP064N, INJ0203BC1, INJ0212AP1, INJ0303AC1, INJ0312AC1, INJ0312AP1, INK0001AC1, INK0001AM1, INK0001AU1
Keywords - INJ0203AC1 MOSFET specs
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