Справочник MOSFET. INJ0203AC1

 

INJ0203AC1 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: INJ0203AC1
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 90 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: SC-59
     - подбор MOSFET транзистора по параметрам

 

INJ0203AC1 Datasheet (PDF)

 ..1. Size:151K  isahaya
 inj0203ac1.pdf pdf_icon

INJ0203AC1

INJ0203AC1 High Speed Switching Silicon P-channel MOSFETDESCRIPTION OUTLINE DRAWING Unit INJ0203AC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable 2.8machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65FEATURE Input impedance is high, and not necessary to consider a drive electric current.

 7.1. Size:151K  isahaya
 inj0203bc1.pdf pdf_icon

INJ0203AC1

INJ0203BC1 Silicon P-channel MOSFETDESCRIPTION OUTLINE DRAWING Unit INJ0203BC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable 2.8machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65FEATURE Input impedance is high, and not necessary to consider a drive electric current. Drive voltage -2.5

 9.1. Size:214K  isahaya
 inj0212ap1.pdf pdf_icon

INJ0203AC1

INJ0212AP1 High Speed Switching Silicon P-channel MOSFET DESCRIPTION OUTLINE DRAWING UNITmmINJ0210AP1 is a Silicon P-channel MOSFET. 4.4 1.5 This product is most suitable for use such as portable 1.6machinery, because of low voltage drive and low on resistance. MARKINGS D G FEATURE Input impedance is high, and not necessary to 0.5 0.4 0.4 consider a drive ele

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