INJ0303AC1 Specs and Replacement

Type Designator: INJ0303AC1

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SC-59

INJ0303AC1 substitution

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INJ0303AC1 datasheet

 ..1. Size:106K  isahaya
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INJ0303AC1

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 9.1. Size:241K  isahaya
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INJ0303AC1

INJ0312AC1 High Speed Switching Silicon P-channel MOSFET DESCRIPTION OUTLINE DRAWING UNIT INJ0312AC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable 2.8 machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65 FEATURE Input impedance is high, and not necessary to consider a drive electric current. ... See More ⇒

 9.2. Size:115K  isahaya
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INJ0303AC1

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Detailed specifications: INJ0003AM1, INJ0003AU1, INJ0011AC1, INJ0011AM1, INJ0011AU1, INJ0203AC1, INJ0203BC1, INJ0212AP1, IRFZ44N, INJ0312AC1, INJ0312AP1, INK0001AC1, INK0001AM1, INK0001AU1, INK0001BC1, INK0001BM1, INK0001BU1

Keywords - INJ0303AC1 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.