All MOSFET. INJ0303AC1 Datasheet

 

INJ0303AC1 Datasheet and Replacement


   Type Designator: INJ0303AC1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SC-59
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INJ0303AC1 Datasheet (PDF)

 ..1. Size:106K  isahaya
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INJ0303AC1

 9.1. Size:241K  isahaya
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INJ0303AC1

INJ0312AC1 High Speed Switching Silicon P-channel MOSFETDESCRIPTION OUTLINE DRAWING UNIT INJ0312AC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable 2.8machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65FEATURE Input impedance is high, and not necessary to consider a drive electric current.

 9.2. Size:115K  isahaya
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INJ0303AC1

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXTA08N120P | IRFP21N60L | AP2318GEN-HF | STT3P2UH7 | STD6N60M2 | UPA2756GR

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