INK0112AM1 Specs and Replacement
Type Designator: INK0112AM1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 13 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: SC-70
INK0112AM1 substitution
- MOSFET ⓘ Cross-Reference Search
INK0112AM1 datasheet
ink0112ac1 ink0112am1 ink0112au1 int0112am1.pdf
INK0112AX SERIES High speed switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING (Unit mm) INK0112A is a Silicon N-channel MOSFET. This product is most suitable for low voltage INK0112AU1 use such as portable machinery , because of low 1.5 voltage drive and low on resistance. 0.35 0.8 0.35 FEATURE Input impedance is high, and not necessary to JEIT... See More ⇒
Detailed specifications: INK0012AU1 , INK0102AC1 , INK0102AM1 , INK0102AU1 , INK0103AC1 , INK0103AM1 , INK0103AU1 , INK0112AC1 , IRF9540 , INK0112AU1 , INK011BAP1 , INK0200AC1 , INK0210AC1 , INK0210AP1 , INK021AAP1 , INK0302AC1 , INK0310AP1 .
Keywords - INK0112AM1 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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