IRC530PBF Specs and Replacement
Type Designator: IRC530PBF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 320 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO-220-5
IRC530PBF substitution
- MOSFET ⓘ Cross-Reference Search
IRC530PBF datasheet
irc530pbf.pdf
PD-96001B IRC530PbF Lead-Free www.irf.com 1 2/10/05 IRC530PbF 2 www.irf.com IRC530PbF www.irf.com 3 IRC530PbF 4 www.irf.com IRC530PbF www.irf.com 5 IRC530PbF 6 www.irf.com IRC530PbF www.irf.com 7 IRC530PbF 8 www.irf.com IRC530PbF HexsenseTO-220 5L Package Outline ( Dimensions are shown in millimeters (inches) Hexsense TO-220 5L Part Marking Information EXAMPL... See More ⇒
Detailed specifications: INK011BAP1, INK0200AC1, INK0210AC1, INK0210AP1, INK021AAP1, INK0302AC1, INK0310AP1, IVN5001ANE, IRFP260, IRC540PBF, IRC630PBF, IRC634PBF, IRC640PBF, IRC644PBF, IRC730PBF, IRC740PBF, IRC830PBF
Keywords - IRC530PBF MOSFET specs
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