IRC730PBF Specs and Replacement
Type Designator: IRC730PBF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220-5
IRC730PBF substitution
- MOSFET ⓘ Cross-Reference Search
IRC730PBF datasheet
Detailed specifications: INK0310AP1, IVN5001ANE, IRC530PBF, IRC540PBF, IRC630PBF, IRC634PBF, IRC640PBF, IRC644PBF, AON7410, IRC740PBF, IRC830PBF, IRC840PBF, IRCZ24, IRCZ24PBF, IRCZ34, ISL9N302AP3, ISL9N302AS3ST
Keywords - IRC730PBF MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IRLZ20 | BRS1N70 | BSC054N04NSG | BSC050N03LS | IRLZ24NL
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