IRCZ24PBF PDF and Equivalents Search

 

IRCZ24PBF Specs and Replacement

Type Designator: IRCZ24PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 59 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO-220-5

IRCZ24PBF substitution

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IRCZ24PBF datasheet

 ..1. Size:141K  international rectifier
 ircz24 ircz24pbf.pdf pdf_icon

IRCZ24PBF

PD - 9.615A IRCZ24 HEXFET Power MOSFET Dynamic dv/dt Rating VDSS = 55V Current Sense 175 C Operating Temperature RDS(on) = 0.040 Fast Switching Ease of Paralleling ID = 26A Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and... See More ⇒

 8.1. Size:145K  international rectifier
 ircz24.pdf pdf_icon

IRCZ24PBF

PD - 9.615A IRCZ24 HEXFET Power MOSFET Dynamic dv/dt Rating VDSS = 55V Current Sense 175 C Operating Temperature RDS(on) = 0.040 Fast Switching Ease of Paralleling ID = 26A Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and... See More ⇒

Detailed specifications: IRC634PBF, IRC640PBF, IRC644PBF, IRC730PBF, IRC740PBF, IRC830PBF, IRC840PBF, IRCZ24, AON6380, IRCZ34, ISL9N302AP3, ISL9N302AS3ST, IVN5000AND, IVN5000ANE, IVN5000ANF, IVN5000ANH, IVN5001AND

Keywords - IRCZ24PBF MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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