All MOSFET. IRCZ24PBF Datasheet

 

IRCZ24PBF Datasheet and Replacement


   Type Designator: IRCZ24PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-220-5
 

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IRCZ24PBF Datasheet (PDF)

 ..1. Size:141K  international rectifier
 ircz24 ircz24pbf.pdf pdf_icon

IRCZ24PBF

PD - 9.615AIRCZ24HEXFET Power MOSFET Dynamic dv/dt RatingVDSS = 55V Current Sense 175C Operating TemperatureRDS(on) = 0.040 Fast Switching Ease of ParallelingID = 26A Simple Drive RequirementsDescriptionThird Generation HEXFETs from International Rectifier provide the designer withthe best combination of fast switching, ruggedized device, low on-resistance and

 8.1. Size:145K  international rectifier
 ircz24.pdf pdf_icon

IRCZ24PBF

PD - 9.615AIRCZ24HEXFET Power MOSFET Dynamic dv/dt RatingVDSS = 55V Current Sense 175C Operating TemperatureRDS(on) = 0.040 Fast Switching Ease of ParallelingID = 26A Simple Drive RequirementsDescriptionThird Generation HEXFETs from International Rectifier provide the designer withthe best combination of fast switching, ruggedized device, low on-resistance and

Datasheet: IRC634PBF , IRC640PBF , IRC644PBF , IRC730PBF , IRC740PBF , IRC830PBF , IRC840PBF , IRCZ24 , IRLZ44N , IRCZ34 , ISL9N302AP3 , ISL9N302AS3ST , IVN5000AND , IVN5000ANE , IVN5000ANF , IVN5000ANH , IVN5001AND .

History: IRFPS29N60LPBF | IPG20N06S2L-65A | WMO140NV6LG4

Keywords - IRCZ24PBF MOSFET datasheet

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