IXCP01N90E Specs and Replacement
Type Designator: IXCP01N90E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 137 nS
Cossⓘ - Output Capacitance: 24 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 80 Ohm
Package: TO-220
IXCP01N90E substitution
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IXCP01N90E datasheet
ixcp01n90e ixcy01n90e.pdf
VDSS = 900 V IXCP 01N90E Gate Controlled ID(limit) = 250mA IXCY 01N90E Current Limiter RDS(on)= 80 N-Channel, Enhancement Mode D G S Symbol Test Conditions Maximum Ratings TO-252 (IXCY) VDSS TJ = 25 C to 150 C 900 V TAB VDGR TJ = 25 C to 150 C; RGS = 1 M 900 V G VGS Continuous 20 V S VGSM Transient 30 V PD TC = 25 C40 W TO-220 (IXCP) TJ -55... See More ⇒
Detailed specifications: ISL9N302AS3ST , IVN5000AND , IVN5000ANE , IVN5000ANF , IVN5000ANH , IVN5001AND , IVN5001ANF , IVN5001ANH , IRFP250 , IXCY01N90E , IPI70R950CE , IPI05CN10N , SCT3060AR , 2SK2071-01S , FIR4N65AFG , MTM45N05E , MTP45N05E .
History: IRFZ40
Keywords - IXCP01N90E MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IRFZ40
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