All MOSFET. IXCP01N90E Datasheet

 

IXCP01N90E Datasheet and Replacement


   Type Designator: IXCP01N90E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 137 nS
   Cossⓘ - Output Capacitance: 24 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 80 Ohm
   Package: TO-220
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IXCP01N90E Datasheet (PDF)

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IXCP01N90E

VDSS = 900 VIXCP 01N90EGate ControlledID(limit) = 250mAIXCY 01N90ECurrent LimiterRDS(on)= 80 N-Channel, Enhancement ModeDGSSymbol Test Conditions Maximum Ratings TO-252 (IXCY)VDSS TJ = 25C to 150C 900 VTABVDGR TJ = 25C to 150C; RGS = 1 M 900 V GVGS Continuous 20 V SVGSM Transient 30 VPD TC = 25C40 WTO-220 (IXCP)TJ -55

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SFP12N65 | 9N90B | SHD224802 | IPD530N15N3 | IRFS151 | TMP830 | 2SK3342

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