All MOSFET. CPC3701 Datasheet

 

CPC3701 Datasheet and Replacement


   Type Designator: CPC3701
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   tr ⓘ - Rise Time: 40 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: SOT-89
 

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CPC3701 Datasheet (PDF)

 ..1. Size:93K  ixys
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CPC3701

CPC370160V, Depletion-Mode, N-ChannelVertical DMOS FETV(BR)DSX / RDS(ON) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3701 is an N-channel, depletion mode, field 60V 1 600mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an

 0.1. Size:93K  ixys
cpc3701c.pdf pdf_icon

CPC3701

CPC370160V, Depletion-Mode, N-ChannelVertical DMOS FETV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3701 is an N-channel, depletion mode, field 60V 1 600mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an

 8.1. Size:97K  ixys
cpc3703.pdf pdf_icon

CPC3701

CPC3703N-Channel Depletion-ModeVertical DMOS FETsBVDSX/ RDS(ON) IDSS (min) Package DescriptionBVDGX (max)The CPC3703 is an N-channel, depletion mode, field 250V 4 360mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e

 8.2. Size:149K  ixys
cpc3703c.pdf pdf_icon

CPC3701

CPC3703CN-Channel Depletion-ModeVertical DMOS FETsDescriptionBVDSX/ RDS(ON) IDSS PackageBVDGX (max) (min)The CPC3703C is an N-channel depletion mode field250V 4.0 300mA SOT-89 effect transistor (FET) that utilizes Clares proprietarythird generation vertical DMOS process. Thirdgeneration process realizes world class, high voltageMOSFET performance in an economical silic

Datasheet: 2SK2071-01S , FIR4N65AFG , MTM45N05E , MTP45N05E , SSS45N20B , RFP4N35 , RFP4N40 , 9N90L-T47 , AON6380 , CPC3701C , CPC3703 , CPC3703C , CPC3710 , CPC3710C , CPC3714 , CPC3714C , CPC3720 .

History: PSMN4R8-100PSE | HSP0048

Keywords - CPC3701 MOSFET datasheet

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