CPC3701 Specs and Replacement
Type Designator: CPC3701
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: SOT-89
CPC3701 substitution
- MOSFET ⓘ Cross-Reference Search
CPC3701 datasheet
cpc3701.pdf
CPC3701 60V, Depletion-Mode, N-Channel Vertical DMOS FET V(BR)DSX / RDS(ON) IDSS (min) Package Description V(BR)DGX (max) The CPC3701 is an N-channel, depletion mode, field 60V 1 600mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an ... See More ⇒
cpc3701c.pdf
CPC3701 60V, Depletion-Mode, N-Channel Vertical DMOS FET V(BR)DSX / RDS(on) IDSS (min) Package Description V(BR)DGX (max) The CPC3701 is an N-channel, depletion mode, field 60V 1 600mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an ... See More ⇒
cpc3703.pdf
CPC3703 N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ RDS(ON) IDSS (min) Package Description BVDGX (max) The CPC3703 is an N-channel, depletion mode, field 250V 4 360mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Features voltage MOSFET performance in an e... See More ⇒
cpc3703c.pdf
CPC3703C N-Channel Depletion-Mode Vertical DMOS FETs Description BVDSX/ RDS(ON) IDSS Package BVDGX (max) (min) The CPC3703C is an N-channel depletion mode field 250V 4.0 300mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third generation vertical DMOS process. Third generation process realizes world class, high voltage MOSFET performance in an economical silic... See More ⇒
Detailed specifications: 2SK2071-01S, FIR4N65AFG, MTM45N05E, MTP45N05E, SSS45N20B, RFP4N35, RFP4N40, 9N90L-T47, IRFZ24N, CPC3701C, CPC3703, CPC3703C, CPC3710, CPC3710C, CPC3714, CPC3714C, CPC3720
Keywords - CPC3701 MOSFET specs
CPC3701 cross reference
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History: STW30NM50N | 4N65KG-TM3-T
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