CPC3710 Specs and Replacement
Type Designator: CPC3710
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.22 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
Package: SOT-89
CPC3710 substitution
- MOSFET ⓘ Cross-Reference Search
CPC3710 datasheet
cpc3710.pdf
CPC3710 N-Channel Depletion-Mode FET PRELIMINARY BVDSX/ RDS(on) IDSS (min) Package Description BVDGX (max) The CPC3710 is an N-channel, depletion-mode, field 250VP 10 220mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Features voltage MOSFET performance in an e... See More ⇒
cpc3710c.pdf
CPC3710 N-Channel Depletion-Mode FET PRELIMINARY V(BR)DSX / RDS(on) IDSS (min) Package Description V(BR)DGX (max) The CPC3710 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes Clare s proprietary 250VP 10 220mA SOT-89 third-generation vertical DMOS process. The third-generation process realizes world class, high Features voltage MOSFET performance ... See More ⇒
cpc3714.pdf
CPC3714 N-Channel Depletion-Mode FET PRELIMINARY BVDSX/ RDS(on) IDSS (min) Package Description BVDGX (max) The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Features voltage MOSFET performance in an e... See More ⇒
cpc3714c.pdf
CPC3714 N-Channel Depletion-Mode FET PRELIMINARY V(BR)DSX / RDS(on) IDSS (min) Package Description V(BR)DGX (max) The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Features voltage MOSFET performance i... See More ⇒
Detailed specifications: SSS45N20B, RFP4N35, RFP4N40, 9N90L-T47, CPC3701, CPC3701C, CPC3703, CPC3703C, 75N75, CPC3710C, CPC3714, CPC3714C, CPC3720, CPC3720C, CPC3730, CPC3730C, CPC5602
Keywords - CPC3710 MOSFET specs
CPC3710 cross reference
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