CPC3710 - Даташиты. Аналоги. Основные параметры
Наименование производителя: CPC3710
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.22 A
Tj ⓘ - Максимальная температура канала: 125 °C
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 30 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 10 Ohm
Тип корпуса: SOT-89
Аналог (замена) для CPC3710
CPC3710 Datasheet (PDF)
cpc3710.pdf

CPC3710N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(on) IDSS (min) Package DescriptionBVDGX (max)The CPC3710 is an N-channel, depletion-mode, field 250VP 10 220mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e
cpc3710c.pdf

CPC3710N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3710 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes Clares proprietary 250VP 10 220mA SOT-89third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance
cpc3714.pdf

CPC3714N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(on) IDSS (min) Package DescriptionBVDGX (max)The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e
cpc3714c.pdf

CPC3714N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance i
Другие MOSFET... SSS45N20B , RFP4N35 , RFP4N40 , 9N90L-T47 , CPC3701 , CPC3701C , CPC3703 , CPC3703C , IRF520 , CPC3710C , CPC3714 , CPC3714C , CPC3720 , CPC3720C , CPC3730 , CPC3730C , CPC5602 .
History: NCE70N380I | CTD02N4P8 | AP95T10AGW-HF | HM4828 | AP95T08GP | IPP50R190CE | AON6996
History: NCE70N380I | CTD02N4P8 | AP95T10AGW-HF | HM4828 | AP95T08GP | IPP50R190CE | AON6996



Список транзисторов
Обновления
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
2sc1312 datasheet | 2sb647 | k3561 transistor | c3203 transistor | irfp450 equivalent | 2sb649 | 2sb324 transistor | b754 transistor