CPH6635 Datasheet. Specs and Replacement
Type Designator: CPH6635
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 5.9 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.7 Ohm
Package: CPH6
CPH6635 substitution
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CPH6635 datasheet
cph6635.pdf
Ordering number ENA2166 CPH6635 Power MOSFET http //onsemi.com 30V, 0.4A, 3.7 , 20V, 1.5A, 280m , Complementary Dual CPH6 Features Excellent ON-resistance characteristic (P-Channel RDS(on)1=215m (typ.)) Optimal for load switch use (N-Channel for drive is embedded) N-Channel 1.5V drive, P-Channel 1.8V drive Halogen Free compliance Specifica... See More ⇒
cph6604.pdf
Ordering number ENN7147 CPH6604 N-Channel Silicon MOSFET CPH6604 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2202 4V drive. [CPH6604] 0.15 2.9 6 5 4 0.05 1 2 3 0.95 1 Source1 2 Gate1 3 Drain2 4 Source2 5 Gate2 0.4 6 Drain1 Specifications SANYO CPH6 Absolute Maximum... See More ⇒
cph6603.pdf
Ordering number ENN7146 CPH6603 P-Channel Silicon MOSFET CPH6603 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2202 4V drive. [CPH6603] 0.15 2.9 5 6 4 0.05 1 2 3 0.95 1 Source1 2 Gate1 3 Drain2 4 Source2 5 Gate2 0.4 6 Drain1 Specifications SANYO CPH6 Absolute Maximu... See More ⇒
Detailed specifications: CPH3461, CPH3462, CPH5852, CPH5871, CPH6311, CPH6411, CPH6429, CPH6434, IRF540, CPH6636R, CPMF-1200-S080B, CPMF-1200-S160B, CPT2301, N0434N, N0439N, N0601N, N0602N
Keywords - CPH6635 MOSFET specs
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