CPMF-1200-S160B MOSFET Datasheet: N-Ch, 1200V, 28A. Full specification with pinout and replacement list

CPMF-1200-S160B Specs and Replacement

Type Designator: CPMF-1200-S160B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 202 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 63 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: CHIP

CPMF-1200-S160B substitution

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CPMF-1200-S160B datasheet

0.1. Size:566K cree
cpmf-1200-s160b.pdf pdf_icon

CPMF-1200-S160B VDS = 1200 V Z-FeTTM Silicon Carbide MOSFET RDS(on) = 160 m N-Channel Enhancement Mode Qg = 47 nC Bare Die Features Package D D Industry Leading RDS(on) High Speed Switching Gate Low Capacitances Easy to Parallel Source Source Simple to Drive Lead-Free G G S S Benefits DIE Higher System Efficiency Reduced Coo... See More ⇒

3.1. Size:811K cree
cpmf-1200-s080b.pdf pdf_icon

CPMF-1200-S080B VDS = 1200 V Z-FeTTM Silicon Carbide MOSFET RDS(on) = 80 m N-Channel Enhancement Mode Qg = 90.8 nC Bare Die Features Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive Lead-Free G G S S Benefits DIE Higher System Efficiency Reduced Cooling Requirements ... See More ⇒

Detailed specifications: CPH5871, CPH6311, CPH6411, CPH6429, CPH6434, CPH6635, CPH6636R, CPMF-1200-S080B, IRFZ44, CPT2301, N0434N, N0439N, N0601N, N0602N, N0603N, N0604N, N2500N