All MOSFET. N0603N Datasheet

 

N0603N MOSFET. Datasheet pdf. Equivalent


   Type Designator: N0603N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 133 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: TO-262

 N0603N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

N0603N Datasheet (PDF)

 ..1. Size:209K  renesas
 n0603n.pdf

N0603N N0603N

Preliminary Data Sheet R07DS0559EJ0100N0603N Rev.1.00Nov 07, 2011N-CHANNEL MOSFET FOR SWITCHING Description The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS (on = 4.6 m MAX. (VGS = 10 V, ID = 50 A) ) Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)

 9.1. Size:99K  renesas
 rej03g0123 h7n0603dlds.pdf

N0603N N0603N

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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