NDB610AE Datasheet. Specs and Replacement

Type Designator: NDB610AE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 72 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TO-263AB

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NDB610AE datasheet

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NDB610AE

May 1994 NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field 26 and 24A, 100V. RDS(ON) = 0.065 and 0.080 . effect transistors are produced using Fairchild's Critical DC electrical parameters specified at proprietary, high cell den... See More ⇒

Detailed specifications: NCV8408, NCV8440A, NDB410AE, NDB410B, NDB410BE, NDB608AE, NDB608B, NDB608BE, AO3401, NDB610B, NDB610BE, NDB708AE, NDB708B, NDB708BE, NDB710AE, NDB710B, NDB710BE

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