All MOSFET. NDB610AE Datasheet

 

NDB610AE Datasheet and Replacement


   Type Designator: NDB610AE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TO-263AB
 

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NDB610AE Datasheet (PDF)

 ..1. Size:63K  fairchild semi
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NDB610AE

May 1994 NDP610A / NDP610AE / NDP610B / NDP610BENDB610A / NDB610AE / NDB610B / NDB610BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field26 and 24A, 100V. RDS(ON) = 0.065 and 0.080. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell den

Datasheet: NCV8408 , NCV8440A , NDB410AE , NDB410B , NDB410BE , NDB608AE , NDB608B , NDB608BE , AO3400 , NDB610B , NDB610BE , NDB708AE , NDB708B , NDB708BE , NDB710AE , NDB710B , NDB710BE .

History: AM20P10-250D | TK10A60W5 | HFD2N65S | R6509KNJ | TMP120N08A | 2SK869 | HM100N02

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