NDB610B MOSFET. Datasheet pdf. Equivalent
Type Designator: NDB610B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 47 nC
trⓘ - Rise Time: 72 nS
Cossⓘ - Output Capacitance: 280 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO-263AB
NDB610B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NDB610B Datasheet (PDF)
ndb610ae ndb610b ndb610be ndp610ae ndp610b ndp610be.pdf
May 1994 NDP610A / NDP610AE / NDP610B / NDP610BENDB610A / NDB610AE / NDB610B / NDB610BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field26 and 24A, 100V. RDS(ON) = 0.065 and 0.080. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell den
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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