All MOSFET. NDB610B Datasheet

 

NDB610B MOSFET. Datasheet pdf. Equivalent


   Type Designator: NDB610B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 47 nC
   trⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO-263AB

 NDB610B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDB610B Datasheet (PDF)

 ..1. Size:63K  fairchild semi
 ndb610ae ndb610b ndb610be ndp610ae ndp610b ndp610be.pdf

NDB610B NDB610B

May 1994 NDP610A / NDP610AE / NDP610B / NDP610BENDB610A / NDB610AE / NDB610B / NDB610BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field26 and 24A, 100V. RDS(ON) = 0.065 and 0.080. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell den

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FCP099N60E | IXTK100N25P | IXTH68N20 | NTMD4820N

 

 
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