All MOSFET. NDB610B Datasheet

 

NDB610B Datasheet and Replacement


   Type Designator: NDB610B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO-263AB
 

 NDB610B substitution

   - MOSFET ⓘ Cross-Reference Search

 

NDB610B Datasheet (PDF)

 ..1. Size:63K  fairchild semi
 ndb610ae ndb610b ndb610be ndp610ae ndp610b ndp610be.pdf pdf_icon

NDB610B

May 1994 NDP610A / NDP610AE / NDP610B / NDP610BENDB610A / NDB610AE / NDB610B / NDB610BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field26 and 24A, 100V. RDS(ON) = 0.065 and 0.080. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell den

Datasheet: NCV8440A , NDB410AE , NDB410B , NDB410BE , NDB608AE , NDB608B , NDB608BE , NDB610AE , SPP20N60C3 , NDB610BE , NDB708AE , NDB708B , NDB708BE , NDB710AE , NDB710B , NDB710BE , NDBA070N10B .

History: 2SK2551 | AOLF66610 | TPCS8303 | CS6N70A4D-G | FQI9N08TU | DH100P35F | LSG65R2K5GT

Keywords - NDB610B MOSFET datasheet

 NDB610B cross reference
 NDB610B equivalent finder
 NDB610B lookup
 NDB610B substitution
 NDB610B replacement

 

 
Back to Top

 


 
.