All MOSFET. NDBA100N10B Datasheet


NDBA100N10B MOSFET. Datasheet pdf. Equivalent

Type Designator: NDBA100N10B

Marking Code: 100N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 35 nC

Rise Time (tr): 385 nS

Drain-Source Capacitance (Cd): 1250 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0069 Ohm

Package: TO-263

NDBA100N10B Transistor Equivalent Substitute - MOSFET Cross-Reference Search


NDBA100N10B Datasheet (PDF)

0.1. ndba100n10b.pdf Size:616K _onsemi


NDBA100N10B Power MOSFET 100V, 6.9m, 100A, N-Channel Features Low On-Resistance VDSS RDS(on) Max ID Max Low Gate Charge 6.9 m@15V High Speed Switching 100V 100A 8.2 m@10V 100% Avalanche Tested Pb-Free, Halogen Free and RoHS Compliance Electrical Connection N-Channel Specifications 2, 4Absolute Maximum Ratings at Ta = 2

9.1. ndba170n06a.pdf Size:418K _onsemi


Ordering number : ENA2250 NDBA170N06A N-Channel Power MOSFET 60V, 170A, 3.3m, TO-263 Features On-resistance RDS(on)=2.5m(typ.) Electrical Connection Input Capacitance Ciss=15800pF(typ.) N-channel Halogen free compliance D(2, 4)Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value UnitG(1)V Drain to Sourc

9.2. ndba180n10b.pdf Size:763K _onsemi


NDBA180N10B Power MOSFET 100V, 2.8m, 180A, N-ChannelVDSS RDS(on) Max ID MaxFeatures 2.8m@ 15V Ultra Low On-Resistance 100V 180A 3.3m@ 10V Low Gate Charge High Speed Switching 100% Avalanche Tested Electrical Connection Pb-Free, Halogen Free and RoHS Compliance N-Channel Specifications 2,4Absolute Maximum Ratings at

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .


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