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NDBA100N10B Specs and Replacement


   Type Designator: NDBA100N10B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 385 nS
   Cossⓘ - Output Capacitance: 1250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0069 Ohm
   Package: TO-263
 

 NDBA100N10B substitution

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NDBA100N10B Specs

 ..1. Size:616K  onsemi
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NDBA100N10B

NDBA100N10B Power MOSFET www.onsemi.com 100V, 6.9m , 100A, N-Channel Features Low On-Resistance VDSS RDS(on) Max ID Max Low Gate Charge 6.9 m @15V High Speed Switching 100V 100A 8.2 m @10V 100% Avalanche Tested Pb-Free, Halogen Free and RoHS Compliance Electrical Connection N-Channel Specifications 2, 4 Absolute Maximum Ratings at Ta = 2... See More ⇒

 9.1. Size:418K  onsemi
 ndba170n06a.pdf pdf_icon

NDBA100N10B

Ordering number ENA2250 NDBA170N06A N-Channel Power MOSFET http //onsemi.com 60V, 170A, 3.3m , TO-263 Features On-resistance RDS(on)=2.5m (typ.) Electrical Connection Input Capacitance Ciss=15800pF(typ.) N-channel Halogen free compliance D(2, 4) Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Value Unit G(1) V Drain to Sourc... See More ⇒

 9.2. Size:763K  onsemi
 ndba180n10b.pdf pdf_icon

NDBA100N10B

NDBA180N10B Power MOSFET www.onsemi.com 100V, 2.8m , 180A, N-Channel VDSS RDS(on) Max ID Max Features 2.8m @ 15V Ultra Low On-Resistance 100V 180A 3.3m @ 10V Low Gate Charge High Speed Switching 100% Avalanche Tested Electrical Connection Pb-Free, Halogen Free and RoHS Compliance N-Channel Specifications 2,4 Absolute Maximum Ratings at ... See More ⇒

Detailed specifications: NDB610BE , NDB708AE , NDB708B , NDB708BE , NDB710AE , NDB710B , NDB710BE , NDBA070N10B , 5N65 , NDBA170N06A , NDBA180N10B , NDD01N60 , NDD02N40 , NDD03N40Z , NDD03N80Z , NDD60N360U1 , NDD60N550U1 .

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