NDBA100N10B Datasheet and Replacement
Type Designator: NDBA100N10B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 385 nS
Cossⓘ - Output Capacitance: 1250 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0069 Ohm
Package: TO-263
NDBA100N10B substitution
NDBA100N10B Datasheet (PDF)
ndba100n10b.pdf

NDBA100N10B Power MOSFET www.onsemi.com 100V, 6.9m, 100A, N-Channel Features Low On-Resistance VDSS RDS(on) Max ID Max Low Gate Charge 6.9 m@15V High Speed Switching 100V 100A 8.2 m@10V 100% Avalanche Tested Pb-Free, Halogen Free and RoHS Compliance Electrical Connection N-Channel Specifications 2, 4Absolute Maximum Ratings at Ta = 2
ndba170n06a.pdf

Ordering number : ENA2250 NDBA170N06A N-Channel Power MOSFEThttp://onsemi.com 60V, 170A, 3.3m, TO-263 Features On-resistance RDS(on)=2.5m(typ.) Electrical Connection Input Capacitance Ciss=15800pF(typ.) N-channel Halogen free compliance D(2, 4)Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value UnitG(1)V Drain to Sourc
ndba180n10b.pdf

NDBA180N10B Power MOSFET www.onsemi.com 100V, 2.8m, 180A, N-ChannelVDSS RDS(on) Max ID MaxFeatures 2.8m@ 15V Ultra Low On-Resistance 100V 180A 3.3m@ 10V Low Gate Charge High Speed Switching 100% Avalanche Tested Electrical Connection Pb-Free, Halogen Free and RoHS Compliance N-Channel Specifications 2,4Absolute Maximum Ratings at
Datasheet: NDB610BE , NDB708AE , NDB708B , NDB708BE , NDB710AE , NDB710B , NDB710BE , NDBA070N10B , 4435 , NDBA170N06A , NDBA180N10B , NDD01N60 , NDD02N40 , NDD03N40Z , NDD03N80Z , NDD60N360U1 , NDD60N550U1 .
History: BSC012N06NS
Keywords - NDBA100N10B MOSFET datasheet
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NDBA100N10B equivalent finder
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History: BSC012N06NS



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