NDBA180N10B Datasheet. Specs and Replacement

Type Designator: NDBA180N10B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 320 nS

Cossⓘ - Output Capacitance: 3000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: TO-263

NDBA180N10B substitution

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NDBA180N10B datasheet

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NDBA180N10B

NDBA180N10B Power MOSFET www.onsemi.com 100V, 2.8m , 180A, N-Channel VDSS RDS(on) Max ID Max Features 2.8m @ 15V Ultra Low On-Resistance 100V 180A 3.3m @ 10V Low Gate Charge High Speed Switching 100% Avalanche Tested Electrical Connection Pb-Free, Halogen Free and RoHS Compliance N-Channel Specifications 2,4 Absolute Maximum Ratings at ... See More ⇒

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 ndba170n06a.pdf pdf_icon

NDBA180N10B

Ordering number ENA2250 NDBA170N06A N-Channel Power MOSFET http //onsemi.com 60V, 170A, 3.3m , TO-263 Features On-resistance RDS(on)=2.5m (typ.) Electrical Connection Input Capacitance Ciss=15800pF(typ.) N-channel Halogen free compliance D(2, 4) Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Value Unit G(1) V Drain to Sourc... See More ⇒

 9.2. Size:616K  onsemi
 ndba100n10b.pdf pdf_icon

NDBA180N10B

NDBA100N10B Power MOSFET www.onsemi.com 100V, 6.9m , 100A, N-Channel Features Low On-Resistance VDSS RDS(on) Max ID Max Low Gate Charge 6.9 m @15V High Speed Switching 100V 100A 8.2 m @10V 100% Avalanche Tested Pb-Free, Halogen Free and RoHS Compliance Electrical Connection N-Channel Specifications 2, 4 Absolute Maximum Ratings at Ta = 2... See More ⇒

Detailed specifications: NDB708B, NDB708BE, NDB710AE, NDB710B, NDB710BE, NDBA070N10B, NDBA100N10B, NDBA170N06A, IRFB3607, NDD01N60, NDD02N40, NDD03N40Z, NDD03N80Z, NDD60N360U1, NDD60N550U1, NDD60N745U1, NDD60N900U1

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