NDD60N360U1
MOSFET. Datasheet pdf. Equivalent
Type Designator: NDD60N360U1
Marking Code: 60N360U1G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 114
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 26
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 47
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36
Ohm
Package:
DPAK
IPAK
NDD60N360U1
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NDD60N360U1
Datasheet (PDF)
..1. Size:130K onsemi
ndd60n360u1.pdf
NDD60N360U1N-Channel Power MOSFET600 V, 360 mWFeatures 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantV(BR)DSS RDS(ON) MAXABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol NDD Unit 600 V 360 mW @ 10 VDrain-to-Source Voltage VDSS 600 VGate-to-Source Voltage VGS 25 VN-Channel
8.1. Size:129K onsemi
ndd60n550u1.pdf
NDD60N550U1N-Channel Power MOSFET600 V, 550 mWFeatures 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantV(BR)DSS RDS(ON) MAXABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)600 V 550 mW @ 10 VParameter Symbol NDD UnitDrain-to-Source Voltage VDSS 600 VGate-to-Source Voltage VGS 25 V N-Channel
8.2. Size:128K onsemi
ndd60n900u1.pdf
NDD60N900U1N-Channel Power MOSFET600 V, 900 mWFeatures 100% Avalanche Testedhttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX600 V 900 mW @ 10 VABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value UnitN-Channel MOSFETDrain-to-Source Voltage VDSS 600 VD (2)Gate-to-Source V
8.3. Size:129K onsemi
ndd60n745u1.pdf
NDD60N745U1N-Channel Power MOSFET600 V, 745 mWFeatures 100% Avalanche Testedhttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX600 V 745 mW @ 10 VABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value UnitN-Channel MOSFETDrain-to-Source Voltage VDSS 600 VD (2)Gate-to-Source V
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