NDP610AE PDF Specs and Replacement
Type Designator: NDP610AE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 72 nS
Cossⓘ - Output Capacitance: 280 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO-220
NDP610AE substitution
NDP610AE PDF Specs
ndb610ae ndb610b ndb610be ndp610ae ndp610b ndp610be.pdf
May 1994 NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field 26 and 24A, 100V. RDS(ON) = 0.065 and 0.080 . effect transistors are produced using Fairchild's Critical DC electrical parameters specified at proprietary, high cell den... See More ⇒
Detailed specifications: NDP410BE , NDP605A , NDP605B , NDP606A , NDP606B , NDP608AE , NDP608B , NDP608BE , IRFZ24N , NDP610B , NDP610BE , NDP708AE , NDP708B , NDP708BE , NDP710AE , NDP710B , NDP710BE .
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