NDS335N Datasheet: MOSFET, N-Ch, 20V, 1.7A. Full specification with pinout and replacement list

NDS335N Datasheet. Specs and Replacement

Type Designator: NDS335N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: SOT-23 SOT-346

NDS335N substitution

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NDS335N datasheet

..1. Size:62K fairchild semi
nds335n.pdf pdf_icon

July 1996 NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N -Channel logic level enhancement mode power field 1.7 A, 20 V. RDS(ON) = 0.14 @ VGS= 2.7 V effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.11 @ VGS= 4.5 V. high cell density, DMOS technology. This very high density process is espec... See More ⇒

9.1. Size:62K fairchild semi
nds336p.pdf pdf_icon

June 1997 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power -1.2 A, -20 V, RDS(ON) = 0.27 @ VGS= -2.7 V field effect transistors are produced using Fairchild's RDS(ON) = 0.2 @ VGS = -4.5 V. proprietary, high cell density, DMOS technology. This very high Very low level ... See More ⇒

9.2. Size:63K fairchild semi
nds331n.pdf pdf_icon

July 1996 NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 1.3 A, 20 V. RDS(ON) = 0.21 @ VGS= 2.7 V effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.16 @ VGS= 4.5 V. high cell density, DMOS technology. This very high density process is especia... See More ⇒

9.3. Size:84K fairchild semi
nds332p.pdf pdf_icon

June 1997 NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -1 A, -20 V, RDS(ON) = 0.41 @ VGS= -2.7 V These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.3 @ VGS = -4.5 V. cell density, DMOS technology. This very high density process is Very ... See More ⇒