NDS335N datasheet, аналоги, основные параметры

Наименование производителя: NDS335N

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.46 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 29 ns

Cossⓘ - Выходная емкость: 130 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm

Тип корпуса: SOT-23 SOT-346

Аналог (замена) для NDS335N

- подборⓘ MOSFET транзистора по параметрам

 

NDS335N даташит

 ..1. Size:62K  fairchild semi
 nds335n.pdf pdf_icon

NDS335N

July 1996 NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N -Channel logic level enhancement mode power field 1.7 A, 20 V. RDS(ON) = 0.14 @ VGS= 2.7 V effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.11 @ VGS= 4.5 V. high cell density, DMOS technology. This very high density process is espec

 9.1. Size:62K  fairchild semi
 nds336p.pdf pdf_icon

NDS335N

June 1997 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power -1.2 A, -20 V, RDS(ON) = 0.27 @ VGS= -2.7 V field effect transistors are produced using Fairchild's RDS(ON) = 0.2 @ VGS = -4.5 V. proprietary, high cell density, DMOS technology. This very high Very low level

 9.2. Size:63K  fairchild semi
 nds331n.pdf pdf_icon

NDS335N

July 1996 NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 1.3 A, 20 V. RDS(ON) = 0.21 @ VGS= 2.7 V effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.16 @ VGS= 4.5 V. high cell density, DMOS technology. This very high density process is especia

 9.3. Size:84K  fairchild semi
 nds332p.pdf pdf_icon

NDS335N

June 1997 NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -1 A, -20 V, RDS(ON) = 0.41 @ VGS= -2.7 V These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.3 @ VGS = -4.5 V. cell density, DMOS technology. This very high density process is Very

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