NDS336P
MOSFET. Datasheet pdf. Equivalent
Type Designator: NDS336P
Marking Code: 336
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.46
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 1.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5.7
nC
trⓘ - Rise Time: 29
nS
Cossⓘ -
Output Capacitance: 170
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2
Ohm
Package:
SOT-23
SOT-346
NDS336P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NDS336P
Datasheet (PDF)
..1. Size:62K fairchild semi
nds336p.pdf 
June 1997 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesSuperSOTTM-3 P-Channel logic level enhancement mode power -1.2 A, -20 V, RDS(ON) = 0.27 @ VGS= -2.7 Vfield effect transistors are produced using Fairchild'sRDS(ON) = 0.2 @ VGS = -4.5 V.proprietary, high cell density, DMOS technology. This very highVery low level
..2. Size:851K cn vbsemi
nds336p.pdf
NDS336Pwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
9.1. Size:62K fairchild semi
nds335n.pdf
July 1996 NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N -Channel logic level enhancement mode power field1.7 A, 20 V. RDS(ON) = 0.14 @ VGS= 2.7 Veffect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.11 @ VGS= 4.5 V.high cell density, DMOS technology. This very high densityprocess is espec
9.2. Size:63K fairchild semi
nds331n.pdf
July 1996 NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power field 1.3 A, 20 V. RDS(ON) = 0.21 @ VGS= 2.7 Veffect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.16 @ VGS= 4.5 V.high cell density, DMOS technology. This very high densityprocess is especia
9.3. Size:84K fairchild semi
nds332p.pdf
June 1997 NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features-1 A, -20 V, RDS(ON) = 0.41 @ VGS= -2.7 VThese P-Channel logic level enhancement mode power fieldeffect transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.3 @ VGS = -4.5 V.cell density, DMOS technology. This very high density process isVery
9.4. Size:869K cn vbsemi
nds332p-nl.pdf
NDS332P-NLwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
9.5. Size:877K cn vbsemi
nds331n-nl.pdf
NDS331N-NLwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Con
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