All MOSFET. NDS9405 Datasheet

 

NDS9405 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NDS9405
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 4.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SO-8

 NDS9405 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDS9405 Datasheet (PDF)

 ..1. Size:52K  fairchild semi
 nds9405.pdf

NDS9405 NDS9405

February 1996 NNDS9405Single P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect -4.3A, -20V. RDS(ON) = 0.10 @ VGS = -10Vtransistors are produced using National's proprietary, high cellHigh density cell design for extremely low RDS(ON)density, DMOS technology. This very high density process isHigh

 8.1. Size:197K  fairchild semi
 nds9400a.pdf

NDS9405 NDS9405

February 1996 NDS9400ASingle P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.4A, -30V. RDS(ON) = 0.13 @ VGS = -10V.transistors are produced using Fairchild's proprietary, high cellHigh density cell design for extremely low RDS(ON).density, DMOS technology. This very high density process ises

 8.2. Size:141K  fairchild semi
 nds9407.pdf

NDS9405 NDS9405

May 2002 NDS9407 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 3.0 A, 60 V. RDS(ON) = 150 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 240 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide range

 8.3. Size:665K  onsemi
 nds9407.pdf

NDS9405 NDS9405

 8.4. Size:918K  cn vbsemi
 nds9407.pdf

NDS9405 NDS9405

NDS9407www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 100 % Rg and UIS testedRDS(on) () at VGS = -10 V 0.050RDS(on) () at VGS = -4.5 V 0.060ID (A) per leg -8SSO-8S1 8 DGS D2 7S3 6 DG D4 5DTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARAMETE

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History: 2SK2138 | FRF254H

 

 
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