NDS9430A Datasheet and Replacement

December 1997 NDS9430ASingle P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect -5.3A, -20V. RDS(ON) = 0.05 @ VGS = -10Vtransistors are produced using National's proprietary, high cell RDS(ON) = 0.065 @ VGS = -6V RDS(ON) = 0.09 @ VGS = -4.5V.density, DMOS technology. This very high density proc

May 2002 NDS9430 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 5.3 A, 30 V RDS(ON) = 60 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) =100 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide range of

January 2002 NDS9435A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 5.3 A, 30 V RDS(ON) = 50 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 80 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide rang

NDS9435Awww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop