NDS9430A datasheet, подбор замены

 ..1. Size:64K  fairchild semi
 nds9430a.pdf 

December 1997 NDS9430A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -5.3A, -20V. RDS(ON) = 0.05 @ VGS = -10V transistors are produced using National's proprietary, high cell RDS(ON) = 0.065 @ VGS = -6V RDS(ON) = 0.09 @ VGS = -4.5V. density, DMOS technology. This very high density proc

 7.1. Size:137K  fairchild semi
 nds9430.pdf 

May 2002 NDS9430 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 5.3 A, 30 V RDS(ON) = 60 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) =100 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide range of

 8.1. Size:166K  fairchild semi
 nds9435a.pdf 

January 2002 NDS9435A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 5.3 A, 30 V RDS(ON) = 50 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 80 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide rang

 8.2. Size:1395K  cn vbsemi
 nds9435a.pdf 

NDS9435A www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top